2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter mjd41c(npn) mjd42c(pnp) features lead formed for surface mount applications in plastic sleeves monolithic construction with built?in base ? emitter resistors pb-free packages are available absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ceo 100 v collector-base voltage v cb 100 v emitter-base voltage v eb 5v collector current i c 6a collector current (pulse) i cp 10 a base current i b 2a total device dissipation fr-5 board @t a =25 derate above 25 p d 20 0.16 w w/ total device dissipation alumina substrate @t a =25 derate above 25 p d 1.75 0.014 w w/ junction temperature t j 150 storage temperature t stg -65to+150 thermal resistance, junction-to-case r jc 6.25 /w thermal resistance, junction-to-ambient r ja 71.4 /w product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter sustaining voltage v ceo(sus) i c =30ma,i b = 0 100 v collector cutoff current i ceo v ce =60v,i b =0 50 a collector cutoff current i ces v ce = 100 v,v eb =0 10 a emitter cutoff current i ebo v be =5v,i c =0 0.5 ma i c =0.3a,v ce =4v 30 i c =3a,v ce =4v 15 75 collector-emitter saturation voltage * v ce( sat) i c =6a,i b = 600 ma 1.5 v base-emitter saturation voltage * v be(on )i c =6a,v ce =4v 2 v current-gain-bandwidth product *2 f t i c = 500 ma,v ce =10v,f test = 1 mhz 3 mhz small-signal current gain h fe i c =0.5a,v ce =10v,f=1khz 20 *1 pulse test: pulse width 300 s, duty cycle 2.0%. *2 f t = h fe f test dc current gain * h fe h fe classification type mjd41c mjd42c marking j41c j42c mjd41c(npn) mjd42c(pnp) product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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